Display apparatus including sensor

ABSTRACT

A display apparatus including a sensor includes: a pixel group including a predetermined number of pixels, each of which includes a pixel circuit and a light-emitting device electrically connected to the pixel circuit; and a sensing pixel including a sensing circuit and a sensing electrode connected to the sensing circuit, where the sensing electrode forms a variable capacitor with respect to a finger, and the sensing circuit is arranged around the pixel circuit of the pixel group.

This application is a continuation of U.S. patent application Ser. No.16/907,842, filed on Jun. 22, 2020, which is a divisional of U.S. patentapplication Ser. No. 15/882,417, filed on Jan. 29, 2018, which claimspriority to Korean Patent Application No. 10-2017-0096376, filed on Jul.28, 2017, and all the benefits accruing therefrom under 35 U.S.C. § 119,the content of which in its entirety is herein incorporated byreference.

BACKGROUND 1. Field

One or more embodiments relate to a display apparatus including asensor.

2. Description of the Related Art

Recently, techniques for measuring or sensing bio-information are indemand. Various researches have been conducted to implement a sensor formeasuring bio-information in a display apparatus.

SUMMARY

One or more embodiments provide a display apparatus having a displayfunction and a fingerprint recognition function.

According to an embodiment, a display apparatus, which includes asensor, includes: a pixel group including a predetermined number ofpixels, where each of the predetermined number of pixels includes apixel circuit and a light-emitting device electrically connected to thepixel circuit; and a sensing pixel including a sensing circuit and asensing electrode connected to the sensing circuit, where the sensingpixel forms a variable capacitor with respect to a finger, and thesensing circuit is arranged around the pixel circuits of the pixelgroup.

In an embodiment, the light-emitting device may include a firstelectrode connected to the pixel circuit, a second electrode opposite tothe first electrode, and an emission layer between the first electrodeand the second electrode, and the sensing electrode may be disposed in asame layer as the first electrode of the light-emitting device.

In an embodiment, an opening may be defined through the second electrodeof the light-emitting device in a region corresponding to the sensingelectrode.

In an embodiment, the sensing electrode may extend along peripheries offirst electrodes in light-emitting devices of the pixel group.

In an embodiment, the light-emitting device may include a firstelectrode connected to the pixel circuit, a second electrode facing thefirst electrode, and an emission layer between the first electrode andthe second electrode, and the sensing electrode may be disposed on thesecond electrode of the light-emitting device.

In an embodiment, an opening may be defined through the second electrodeof the light-emitting device in a region corresponding to the sensingelectrode, and the sensing electrode may contact an electrode layer,which is in a same layer as the first electrode, via the opening.

In an embodiment, the electrode layer may be connected to the sensingcircuit.

In an embodiment, the display apparatus may further include a shieldline which prevents a parasitic capacitor among pixel circuits of thepixel group.

In an embodiment, the shield line may be a floating wire.

In an embodiment, a predetermined voltage may be applied to the shieldline.

In an embodiment, pixel circuits in the pixel group may be arrangedsymmetrical with one another in a transverse direction.

In an embodiment, each of the predetermined number of pixels may includeat least two sub-pixels.

According to another embodiment, a display apparatus including a sensorincludes: a substrate; a plurality of pixel circuits on the substrate; asensing circuit on the substrate and arranged to surround the pluralityof pixel circuits; a plurality of light-emitting devices on the pixelcircuits, where the plurality of light-emitting device includes firstelectrodes and second electrodes opposite to the first electrodes, andeach of the first electrodes is connected to a corresponding pixelcircuit from among the plurality of pixel circuits; and a sensingelectrode arranged on the sensing circuit, and electrically connected tothe sensing circuit, where the sensing electrode forms a variablecapacitor with respect to a finger.

In an embodiment, the sensing electrode may be in a same layer as thefirst electrodes and extend along peripheries of the first electrodes ofthe plurality of light-emitting devices, and an opening may be definedthrough each of the second electrodes in a region corresponding to thesensing electrode.

In an embodiment, the sensing electrode may overlap the first electrodesof the plurality of light-emitting devices on the second electrodes, andan opening may be defined through each of the second electrode in aregion corresponding to the sensing electrode.

In an embodiment, the display apparatus may further include an electrodelayer in a same layer as the first electrodes, where the electrode layermay be electrically connected to the sensing circuit, and contact thesensing electrode via the opening.

In an embodiment, the display apparatus may further include a shieldline arranged between the pixel circuits, where the shield line preventsa parasitic capacitor among the pixel circuits.

In an embodiment, the shield line may be a floating wire.

In an embodiment, a predetermined voltage may be applied to the shieldline.

In an embodiment, the pixel circuits may be arranged symmetrically witheach other at least in a transverse direction.

BRIEF DESCRIPTION OF THE DRAWINGS

These and/or other features will become apparent and more readilyappreciated from the following description of the embodiments, taken inconjunction with the accompanying drawings, in which:

FIG. 1 is a partial plan view of an organic light-emitting displayapparatus according to an embodiment of the disclosure;

FIG. 2 is a diagram illustrating fingerprint recognition of a sensingpixel according to an embodiment of the disclosure;

FIG. 3 is a cross-sectional view taken along line I-I′ of FIG. 1;

FIG. 4 is a plan view showing an arrangement of a first electrode of asub-pixel and a sensing electrode of a sensing pixel shown in FIG. 3;

FIG. 5 is a cross-sectional view of an encapsulation substrate arrangedon the organic light-emitting display apparatus of FIG. 3;

FIG. 6 is a cross-sectional view showing an organic light-emittingdisplay apparatus according to an alternative embodiment;

FIG. 7 is a plan view showing an arrangement of a first electrode of asub-pixel and a sensing electrode of a sensing pixel shown in FIG. 6;

FIG. 8 is a cross-sectional view of an encapsulation substrate arrangedon the organic light-emitting display apparatus of FIG. 6;

FIG. 9 is a plan view showing an arrangement of a pixel circuit and asensing circuit of an organic light-emitting display apparatus accordingto an embodiment of the disclosure;

FIGS. 10A to 10D are diagrams showing various embodiments of a pixelcircuit group;

FIG. 11 is a diagram showing wiring in a pixel circuit group, accordingto an embodiment of the disclosure;

FIG. 12 is a circuit diagram of a pixel circuit in a sub-pixel,according to an embodiment of the disclosure;

FIG. 13 is a circuit diagram of a sensing circuit in a sensing pixel,according to an embodiment of the disclosure;

FIG. 14 is a plan view of an organic light-emitting display apparatus,showing an arrangement of the pixel circuit of FIG. 12 and the sensingcircuit of FIG. 13, according to an embodiment of the disclosure;

FIGS. 15 to 17 are partial cross-sectional views showing embodiments ofthe organic light-emitting display apparatus of FIG. 14; and

FIG. 18 is a plan view of an organic light-emitting display apparatus,showing an arrangement of the pixel circuit of FIG. 12 and the sensingcircuit of FIG. 13, according to an alternative embodiment of thedisclosure.

DETAILED DESCRIPTION

The invention now will be described more fully hereinafter withreference to the accompanying drawings, in which various embodiments areshown. This invention may, however, be embodied in many different forms,and should not be construed as limited to the embodiments set forthherein. Rather, these embodiments are provided so that this disclosurewill be thorough and complete, and will fully convey the scope of theinvention to those skilled in the art. Like reference numerals refer tolike elements throughout.

It will be understood that when an element is referred to as being “on”another element, it can be directly on the other element or interveningelements may be therebetween. In contrast, when an element is referredto as being “directly on” another element, there are no interveningelements present.

It will be understood that, although the terms “first,” “second,”“third” etc. may be used herein to describe various elements,components, regions, layers and/or sections, these elements, components,regions, layers and/or sections should not be limited by these terms.These terms are only used to distinguish one element, component, region,layer or section from another element, component, region, layer orsection. Thus, “a first element,” “component,” “region,” “layer” or“section” discussed below could be termed a second element, component,region, layer or section without departing from the teachings herein.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting. As used herein, thesingular forms “a,” “an,” and “the” are intended to include the pluralforms, including “at least one,” unless the content clearly indicatesotherwise. “Or” means “and/or.” As used herein, the term “and/or”includes any and all combinations of one or more of the associatedlisted items. It will be further understood that the terms “comprises”and/or “comprising,” or “includes” and/or “including” when used in thisspecification, specify the presence of stated features, regions,integers, steps, operations, elements, and/or components, but do notpreclude the presence or addition of one or more other features,regions, integers, steps, operations, elements, components, and/orgroups thereof.

Furthermore, relative terms, such as “lower” or “bottom” and “upper” or“top,” may be used herein to describe one element's relationship toanother element as illustrated in the Figures. It will be understoodthat relative terms are intended to encompass different orientations ofthe device in addition to the orientation depicted in the Figures. Forexample, if the device in one of the figures is turned over, elementsdescribed as being on the “lower” side of other elements would then beoriented on “upper” sides of the other elements. The exemplary term“lower,” can therefore, encompasses both an orientation of “lower” and“upper,” depending on the particular orientation of the figure.Similarly, if the device in one of the figures is turned over, elementsdescribed as “below” or “beneath” other elements would then be oriented“above” the other elements. The exemplary terms “below” or “beneath”can, therefore, encompass both an orientation of above and below.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure belongs. It willbe further understood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art and thedisclosure, and will not be interpreted in an idealized or overly formalsense unless expressly so defined herein.

Exemplary embodiments are described herein with reference to crosssection illustrations that are schematic illustrations of idealizedembodiments. As such, variations from the shapes of the illustrations asa result, for example, of manufacturing techniques and/or tolerances,are to be expected. Thus, embodiments described herein should not beconstrued as limited to the particular shapes of regions as illustratedherein but are to include deviations in shapes that result, for example,from manufacturing. For example, a region illustrated or described asflat may, typically, have rough and/or nonlinear features. Moreover,sharp angles that are illustrated may be rounded. Thus, the regionsillustrated in the figures are schematic in nature and their shapes arenot intended to illustrate the precise shape of a region and are notintended to limit the scope of the claims.

When a certain embodiment may be implemented differently, a specificprocess order may be performed differently from the described order. Forexample, two consecutively described processes may be performedsubstantially at the same time or performed in an order opposite to thedescribed order.

Hereinafter, exemplary embodiments of the invention will be described indetail with reference to the accompanying drawings. In the drawings, asame or like components will be referred to as a same or like referencenumeral, and any repetitive detailed description thereof may be omittedor simplified.

FIG. 1 is a partial plan view of an organic light-emitting displayapparatus 1 according to an embodiment of the disclosure.

Referring to FIG. 1, a plurality of sub-pixels is arranged on a displayarea of the organic light-emitting display apparatus 1. In oneembodiment, for example, the organic light-emitting display apparatus 1may include a plurality of first sub-pixels SPX1, a plurality of secondsub-pixels SPX2, and a plurality of third sub-pixels SPX3. The firstsub-pixel SPX1, the second sub-pixel SPX2, and the third sub-pixel SPX3may be repeatedly arranged according to a predetermined pattern incolumn and row directions.

In such an embodiment, the third sub-pixel SPX3 may have a smaller areathan neighboring first sub-pixel SPX1 and second sub-pixel SPX2. Thethird sub-pixel SPX3 may be a green sub-pixel G that emits green light.The plurality of third sub-pixels SPX3 are spaced apart from one anotherand arranged on a first line IL1 that is an imaginary line. The thirdsub-pixel SPX3 may have various shapes such as a polygonal shape, e.g.,square, octagon, etc., a round shape, e.g., a circular shape, an ovalshape, etc., or a polygonal shape having a rounded corner.

In an embodiment, the first sub-pixels SPX1 are located at a pair offirst vertices P1 diagonally facing each other in an imaginaryquadrangle IS having a center point of the third sub-pixels SPX3 as acenter point thereof, and the second sub-pixels SPX2 are located at apair of second vertices P2 diagonally facing each other in the imaginaryquadrangle IS. The imaginary quadrangle IS may be a square.

The first sub-pixel SPX1 is spaced apart from the second sub-pixel SPX2and the third sub-pixel SPX3, and has a center point at the first vertexP1 of the imaginary quadrangle IS. The first sub-pixel SPX1 may have agreater area than the neighboring third sub-pixel SPX3. The firstsub-pixel SPX1 may be a red sub-pixel R that emits red light. The firstsub-pixel SPX1 may have various shapes such as a polygonal shape, e.g.,square, octagon, etc., a round shape, e.g., a circular shape, an ovalshape, etc., or a polygonal shape having a rounded corner.

The second sub-pixel SPX2 is spaced apart from the first sub-pixel SPX1and the third sub-pixel SPX3, and has a center point at the secondvertex P2 that is adjacent to the first vertex P1 of the imaginaryquadrangle IS. In an embodiment, as shown in FIG., 1, the secondsub-pixel SPX2 may have a greater area than the neighboring thirdsub-pixel SPX3. In such an embodiment, the second sub-pixel SPX2 mayhave a different area from that of the first sub-pixel SPX1, forexample, the second sub-pixel SPX2 may have a greater area than thefirst sub-pixel SPX1. In an alternative embodiment, an area of thesecond sub-pixel SPX2 may be equal to that of the first sub-pixel SPX1.The second sub-pixel SPX2 may be a blue sub-pixel B that emits bluelight. The second sub-pixel SPX2 may have various shapes such as apolygonal shape, e.g., square, octagon, etc., a round shape, e.g., acircular shape, an oval shape, etc., or a polygonal shape having arounded corner.

In an embodiment, the plurality of first sub-pixels SPX1 and theplurality of second sub-pixels SPX2 are arranged alternately with eachother on an imaginary second line IL2. In such an embodiment, theplurality of first sub-pixels SPX1 having center points at the firstvertex P1 and the plurality of second sub-pixels SPX2 having the centerpoints at the second vertex P2 respectively surround the thirdsub-pixels SPX3.

In such an embodiment, where the plurality of first sub-pixels SPX1 andthe plurality of second sub-pixels SPX2 are respectively arranged tosurround the third sub-pixels SPX3, each of the first sub-pixel SPX1,the second sub-pixel SPX2, and the third sub-pixel SPX3 may have animproved aperture ratio. In such an embodiment, quality of imagesdisplayed by the organic light-emitting display apparatus 1 is improved,and manufacturing time and manufacturing costs of the organiclight-emitting display apparatus 1 may be reduced.

In an embodiment, due to the arrangement of the sub-pixels describedabove, intervals among the sub-pixels that emit the light of a samecolor are increased to improve deposition reliability, and intervalsamong the sub-pixels that emit light of different colors, that is, thered, green and blue sub-pixels, are reduced to improve the apertureratio.

In an embodiment, the organic light-emitting display apparatus 1 mayhave an arrangement of the sub-pixels, in which the first sub-pixelSPX1, the second sub-pixel SPX2, and the third sub-pixel SPX3respectively emit red light, blue light and green light, but embodimentsare not limited thereto. In an alternative embodiment, the firstsub-pixel SPX1, the second sub-pixel SPX2 and the third sub-pixel SPX3may respectively emit light different from the red light, the bluelight, and the green light. In one alternative embodiment, for example,one or more of the first sub-pixel SPX1 and the second sub-pixel SPX2may emit white light.

Two sub-pixels may collectively define a unit pixel. In an embodiment, afirst pixel PX1 includes the first sub-pixel SPX1 and the thirdsub-pixel SPX3, and a second pixel PX2 includes the second sub-pixelSPX2 and the third sub-pixel SPX3. The first pixel PX1 and the secondpixel PX2 are alternately arranged with each other to be close to eachother.

According to an embodiment, the organic light-emitting display apparatus1 may include a sensor. The sensor may include a plurality of sensingpixels FPX located adjacent to at least one pixel in the display area.The sensor may be a fingerprint sensor for sensing a fingerprint. Thefingerprint sensor may include a sensing electrode forming a capacitorwith a finger.

FIG. 2 is a diagram illustrating fingerprint recognition of a sensingpixel FPX according to an embodiment of the disclosure. Referring toFIG. 2, a fingerprint 100 has a height variation between ridges 101 andvalleys 103, and accordingly, a capacitance C_(F_V) between the ridge101 and the sensing electrode and a capacitance C_(F_R) between thevalley 103 and the sensing electrode are different from each other. Insuch an embodiment, the fingerprint may be recognized based on such adifference between the capacitances.

In such an embodiment, it is desired to appropriately arrange pixels ofthe display apparatus and pixels of the fingerprint sensor and arrangethe sensing electrode for improving fingerprint sensing performance.

FIG. 3 is a cross-sectional view taken along line I-I′ of FIG. 1.

Referring to FIG. 3, an embodiment of an organic light-emitting displayapparatus 1 a may include a first area on which sub-pixels SPX arearranged and a second area on which sensing pixels FPX are arranged.

In an embodiment, the sub-pixels SPX, each of which includes a pixelcircuit including a thin film transistor DTFT and a light-emittingdevice EL connected to the pixel circuit, may be disposed in the firstarea on a substrate 10. The pixel circuit may further include acapacitor.

The thin film transistor DTFT includes an active layer 21, a gateelectrode 23, a source electrode 25, and a drain electrode 27. Thesource electrode 25 and the drain electrode 27 are electricallyconnected to a source region and a drain region of the active layer 21,respectively.

A buffer layer 11 is disposed between the substrate 10 and the thin filmtransistor DTFT.

A first insulating layer 12 is disposed between the active layer 21 andthe gate electrode 23, and a second insulating layer 13 is disposedbetween the gate electrode 23 and the source and drain electrodes 25 and27.

The light-emitting device EL includes a first electrode 31, a secondelectrode 35 facing the first electrode 31, and an intermediate layer 33between the first electrode 31 and the second electrode 35 and includingan organic emission layer. The first electrode 31 is disposed on a thirdinsulating layer 14 that covers the pixel circuit, and is electricallyconnected to the source electrode 25 or the drain electrode 27 (thedrain electrode 27 in the embodiment illustrated with reference to FIG.3). Edges of the first electrode 31 may be covered by a pixel-defininglayer 15.

The first electrode 31 may be in an island shape in each sub-pixelindependently from another first electrode, i.e., the first electrode ofanother pixel. The second electrode 35 may be a thin film having athickness of a few to tens of nanometers (nm), and may be providedthroughout the entire sub-pixels of the organic light-emitting displayapparatus to be electrically connected to another second electrode,i.e., the second electrode of another pixel. The second electrode 35covers an upper portion of the pixel-defining layer 15 and disposed onan entire surface of the substrate 10.

The intermediate layer 33 includes an organic emission layer that emitslight, and additionally, may further include at least one of a holeinjection layer (“HIL”), a hole transport layer (“HTL”), an electrontransport layer (“ETU), and an electron injection layer (”EIL″).However, embodiments are not limited thereto, and alternatively, variousfunctional layers may be further disposed between the first electrode 31and the second electrode 35.

The organic emission layer may emit red light, green light, or bluelight. However, embodiments are not limited thereto, that is, theorganic emission layer may emit white light. In this case, the organicemission layer may have a structure in which a light-emitting materialemitting red light, a light-emitting material emitting green light, anda light-emitting material emitting blue light are stacked, or astructure in which the light-emitting material emitting red light, thelight-emitting material emitting green light, and the light-emittingmaterial emitting blue light are mixed.

In such an embodiment, the sensing pixels FPX, each of which includes asensing circuit including a sensing thin film transistor STFT and asensing electrode 51 connected to the sensing circuit, may be disposedin the second area on the substrate 10. The sensing circuit may furtherinclude a capacitor.

The sensing thin film transistor STFT includes an active layer 41, agate electrode 43, a source electrode 45, and a drain electrode 47. Thesource electrode 45 and the drain electrode 47 are electricallyconnected to a source region and a drain region of the active layer 41,respectively.

The buffer layer 11 is disposed between the substrate 10 and the sensingthin film transistor STFT.

The first insulating layer 12 is disposed between the active layer 41and the gate electrode 43, and the second insulating layer 13 isdisposed between the gate electrode 43 and the source and drainelectrodes 45 and 47.

The sensing electrode 51 forms a variable capacitor with a finger sothat a fingerprint of the finger may be recognized. The sensingelectrode 51 is disposed on the third insulating layer 14, and iselectrically connected to the source electrode 45 or the drain electrode47 (the drain electrode 47 in the embodiment illustrated with referenceto FIG. 3). The sensing electrode 51 is covered by the pixel-defininglayer 15. The sensing electrode 51 does not overlap with the firstelectrode 31 of the sub-pixel SPX when viewed from a plan view in athickness direction of the substrate 10, and may be in a form of anindependent island around the first electrode 31.

In an embodiment, as shown in FIG. 3, a part of the second electrode 35located above or to overlap the sensing electrode 51 may include apattern area A, in which a plurality of openings OP that partiallyexpose the pixel-defining layer 15 is defined. Accordingly, in such anembodiment, influence of the second electrode 35 on the variablecapacitor between the finger and the sensing electrode 51 may bereduced, and accordingly, fingerprint sensing efficiency may beimproved.

FIG. 4 is a plan view showing arrangement of the first electrode 31 ofthe sub-pixel SPX and the sensing electrode 51 of the sensing pixel FPXshown in FIG. 3.

Referring to FIG. 4, the first electrode 31 is arranged in eachsub-pixel SPX on the third insulating layer 14, and the sensingelectrode 51 may be arranged adjacent to the first electrode 31 (e.g.,31R, 31B and 31G) of the sub-pixel SPX.

The first electrode 31 may have a size corresponding to that of thesub-pixel shown in FIG. 1. In one embodiment, for example, a firstelectrode 31R of a first sub-pixel SPX1, a first electrode 31B of asecond sub-pixel SPX2, and a first electrode 31G of a third sub-pixelSPX3 may have different sizes from one another.

The sensing electrode 51 extends along with peripheral portions of thefirst electrodes 31 of the plurality of sub-pixels SPX to be distributedwidely to ensure a sensing area. The sensing electrode 51 may have ashape and a size that vary depending on the shapes, sizes, andarrangement of the first electrodes 31.

The second electrode 35 of the organic light-emitting display apparatus1 a may be sealed by an encapsulation member (not shown) thereon.

In one embodiment, for example, the encapsulation member may be anencapsulation thin film. The encapsulation member may include a filmcomprising an inorganic material such as silicon oxide or siliconnitride, or may have a structure in which an inorganic layer and a layerincluding an organic material such as epoxy or polyimide are alternatelystacked one on another.

In an alternative embodiment, the encapsulation member may be anencapsulation substrate.

FIG. 5 is a cross-sectional view of an encapsulation substrate arrangedon the organic light-emitting display apparatus 1 a of FIG. 3.

Referring to FIG. 5, a fourth insulating layer 17 may be disposed on thesecond electrode 35 of the organic light-emitting display apparatus 1 a.The fourth insulating layer 17 may include a single-layered ormulti-layered inorganic insulating layer or a single-layered ormulti-layered organic insulating layer, or may have a structure in whichthe inorganic and organic insulating layers are alternately stacked ordisposed. The fourth insulating layer 17 may function as a capping layerand/or a protective layer.

A black matrix 81 may be disposed on a surface of an encapsulationsubstrate 90 facing the substrate 10, at a location corresponding to aremaining region except for the first electrodes 31. The black matrix 81may be disposed on a surface of the encapsulation substrate 90. In analternative embodiment, the black matrix 81 may be disposed in a recessof the encapsulation substrate 90.

An insulating layer 83 may be disposed under the encapsulation substrate90, e.g., on an entire lower surface of the encapsulation substrate 90.The insulating layer 83 may include an inorganic material layer.

A layer 70 including a moisture absorbent or a filler may be disposedbetween the substrate 10 and the encapsulation substrate 90, e.g.,between the fourth insulating layer 17 and the insulating layer 83.

FIG. 6 is a cross-sectional view showing an organic light-emittingdisplay apparatus according to an alternative embodiment. Particularly,FIG. 6 shows a portion of an organic light-emitting display apparatuscorresponding to that shown in FIG. 3.

Referring to FIG. 6, an alternative embodiment of an organiclight-emitting display apparatus 1 b may include a first area on whichsub-pixels SPX are disposed and a second area on which sensing pixelsFPX are disposed. The organic light-emitting display apparatus 1 b ofFIG. 6 may be substantially the same as the organic light-emittingdisplay apparatus 1 a of FIG. 3, except for arrangement of the sensingelectrode. Therefore, any repetitive detailed description of the same orlike elements thereof will be omitted.

In such an embodiment, the sub-pixels SPX, each of which includes apixel circuit including a thin film transistor DTFT and a light-emittingdevice EL connected to the pixel circuit, may be disposed in the firstarea on a substrate 10. The pixel circuit may further include acapacitor.

The sensing pixel FPX including a sensing circuit including a sensingthin film transistor STFT and a sensing electrode 55 may be disposed inthe second area on the substrate 10. The sensing circuit may furtherinclude at least one capacitor.

The sensing thin film transistor STFT includes an active layer 41, agate electrode 43, a source electrode 45, and a drain electrode 47. Thesource electrode 45 and the drain electrode 47 are electricallyconnected to a source region and a drain region of the active layer 41,respectively.

The sensing electrode 55 may be electrically connected to the sensingthin film transistor STFT via a connecting electrode 53.

The connecting electrode 53 is disposed on the third insulating layer14, and is electrically connected to the source electrode 45 or thedrain electrode 47 (e.g., the drain electrode 47 as shown in FIG. 6).The connecting electrode 53 is covered by the pixel-defining layer 15.The connecting electrode 53 does not overlap with the first electrode 31of the sub-pixel SPX when viewed from the plan view in the thicknessdirection of the substrate 10, and may be in a form of an independentisland around the first electrode 31.

The second electrode 35 located above the connecting electrode 53 mayinclude a pattern area B in which a first opening OP1 partially exposingthe pixel-defining layer 15 is defined. In such an embodiment, as shownin FIG. 6, a single opening OP1 is defined in each pattern area B, butembodiments are not limited thereto. Alternatively, a plurality ofopenings OP1 may be defined in each pattern area B.

In such an embodiment, a fifth insulating layer 18 may be disposed onthe second electrode 35 of the sub-pixel SPX.

A second opening OP2 partially exposing the connecting electrode 53 maybe defined, e.g., formed by patterning the fifth insulating layer 18 andthe pixel-defining layer 15 at a portion of the second electrode 35,which corresponds to the first opening OP1 of the pattern area B.

The sensing electrode 55 is disposed to cover a predetermined region onthe fifth insulating layer 18, and the sensing electrode 55 may coverside surfaces of the second opening OP2 and an upper portion of theconnecting electrode 53, which is exposed via the second opening OP2.Accordingly, in such an embodiment, the sensing electrode 55 may contactthe connecting electrode 53, and may be electrically connected to thesensing thin film transistor STFT.

In such an embodiment, as shown in FIG. 6, the organic light-emittingdisplay apparatus 1 b includes the sensing electrode 55 of a greaterarea and the variable capacitor between the finger and the sensingelectrode 55 is formed above the second electrode 35, and accordingly,influence of the second electrode 35 may be reduced and fingerprintsensing efficiency may be improved.

FIG. 7 is a plan view showing arrangement of the first electrode 31 ofthe sub-pixel SPX and the sensing electrode 55 of the sensing pixel FPXof FIG. 6.

Referring to FIG. 7, the first electrode 31 is disposed in eachsub-pixel SPX on the third insulating layer 14, and the connectingelectrode 53 may be disposed at a side of the first electrodes 31 (e.g.,31R, 31B, and 31G) of the plurality of sub-pixels SPX.

The first electrode 31 may have a size corresponding to that of thesub-pixel shown in FIG. 1. In one embodiment, for example, a firstelectrode 31R of a first sub-pixel SPX1, a first electrode 31B of asecond sub-pixel SPX2, and a first electrode 31G of a third sub-pixelSPX3 may have different sizes from one another.

The sensing electrode 55 is disposed on upper portions of the firstelectrodes 31 of the plurality of sub-pixels SPX, and may be connectedto the connecting electrode 53 at a contact portion C. In FIG. 7, forconvenience of illustration, the pixel-defining layer 15 on theconnecting electrode 53, the second electrode 35 of the light-emittingdevice EL, and the fifth insulating layer 18 are omitted. The sensingelectrode 55 may have an area that is enough to cover the plurality offirst electrodes 31, and may have a square-like shape.

The sensing electrode 55 of the organic light-emitting display apparatus1 b may be sealed by an encapsulation member thereon.

In one embodiment, for example, the encapsulation member may be anencapsulation thin film. The encapsulation member may include a filmincluding an inorganic material such as silicon oxide or siliconnitride, or may have a structure in which an inorganic layer and a layerincluding an organic material such as epoxy or polyimide are alternatelystacked one on another.

In alternative embodiment, the encapsulation member may be anencapsulation substrate.

FIG. 8 is a cross-sectional view of an encapsulation substrate arrangedon the organic light-emitting display apparatus 1 b of FIG. 6.

Referring to FIG. 8, a sixth insulating layer 19 may be disposed on thesensing electrode 55 of the organic light-emitting display apparatus 1b. The sixth insulating layer 19 may include a single-layered ormulti-layered inorganic insulating layer, or a single-layered ormulti-layered organic insulating layer, or may have a structure in whichthe inorganic and organic insulating layers are alternately arranged.The sixth insulating layer 19 may function as a capping layer and aprotective layer.

A black matrix 81 may be disposed on a surface of an encapsulationsubstrate 90 facing the substrate 10, e.g., a lower surface of theencapsulation substrate 90, at a location corresponding to a remainingregion except for the first electrodes 31. The black matrix 81 may bedisposed on a surface of the encapsulation substrate 90. In analternative embodiment, the black matrix 81 may be disposed in a recessof the encapsulation substrate 90.

An insulating layer 83 may be disposed under the encapsulation substrate90, e.g., on the entire lower surface of the encapsulation substrate 90.The insulating layer 83 may include an inorganic material layer.

A layer 70 including a moisture absorbent or a filler may be disposedbetween the substrate 10 and the encapsulation substrate 90, e.g.,between the fifth insulating layer 18 and the insulating layer 83.

The cross-sectional views of FIGS. 3 to 8 show exemplary embodiments ofthe invention, and although the arrangement of the first electrode ofthe light-emitting device and the sensing electrode of the sensingcircuit may be uniform, connections and arrangement of the other circuitdevices may be variously modified based on configurations of the pixelcircuit and the sensing circuit.

FIG. 9 is a plan view showing arrangement of a pixel circuit and asensing circuit of an organic light-emitting display apparatus 1according to an embodiment of the disclosure.

Referring to FIG. 9, pixel circuits of a pixel group including thepredetermined number of pixels PX (PCG, hereinafter, referred to as‘pixel circuit group’) and the sensing circuit SC of the sensing pixelFPX may be repeatedly arranged on the substrate 10 of the organiclight-emitting display apparatus 1 in row and column directions.

The pixel group may include at least one pixel PX, and the pixelcircuits in the pixel circuit group PCG may have a symmetric structureat least in a transverse direction. In one embodiment, for example, thepixel circuits in the pixel circuit group PCG may have a symmetricstructure in both longitudinal and transverse directions.

The sensing circuit SC may be disposed along a peripheral portion of thepixel circuit group PCG. In such an embodiment, a thin film transistorand a capacitor included in the sensing circuit SC may be appropriatelydistributed around the pixel circuit group PCG.

The pixel circuit group PCG may include pixel circuits PC of N×N pixelsPX. The pixel circuits PC in the pixel circuit group PCG may be disposedin a predetermined arrangement so that a parasitic capacitor among thepixels is the minimum.

In one embodiment, for example, when N is an even number, circuitdevices may be arranged in a way such that the pixel circuits PC may besymmetric with one another in longitudinal and transverse directions inunits of four pixel circuits PC. In one alternative embodiment, forexample, when N is an odd number, the circuit devices may be arranged ina way such that the pixel circuits PC may be symmetric with each otherin units of two pixel circuits PC.

According to an embodiment of the disclosure, a plurality of pixels ispacked to ensure space, and the sensor is arranged in the ensured spaceto effectively control the capacitance of the sensor. In such anembodiment, the pixel circuits of the pack pixels are arranged to besymmetric in the transverse direction or in the longitudinal andtransverse directions, and thus, the parasitic capacitor among thepixels are similar to one another, and thereby improving a mura defect.

FIGS. 10A to 10D are diagrams showing various embodiments of a pixelcircuit group PCG.

In an embodiment, as shown in FIG. 10A, the pixel circuit group PCG mayinclude pixel circuits of 1×1 pixel PX (e.g., one pixel or twosub-pixels). The pixels PX may include a first pixel PX1 or a secondpixel PX2. A pair of pixel circuits PC1 and PC3 of the pixel circuitgroup PCG has a symmetric structure in the transverse direction.

In an alternative embodiment, as shown in FIG. 10B, the pixel circuitgroup PCG may include pixel circuits PC1-PC3 of 2×2 pixels PX (e.g.,four pixels or eight sub-pixels). The four pixels PX may include twofirst pixels PX1 and two second pixels PX2 that are alternately arrangedwith each other. Each of a pair of pixel circuits PC1 and PC3 of thefirst pixel PX1 and a pair of pixel circuits PC2 and PC3 of the secondpixel PX2 has a symmetric structure in the transverse direction. Thepixel circuits PC1 and PC3 of the first pixel PX1 and the pixel circuitsPC2 and PC3 of the second pixel PX2 that are arranged above and beloweach other are symmetric with each other in the longitudinal direction.

In another alternative embodiment, as shown in FIG. 10C, the pixelcircuit group PCG may include pixel circuits PC of 3×3 pixels PX (e.g.,nine pixels or eighteen sub-pixels). The nine pixels PX may include fivefirst pixels PX1 and four second pixels PX2 that are alternatelyarranged with each other. Each of a pair of pixel circuits PC1 and PC3of the first pixel PX1 and a pair of pixel circuits PC2 and PC3 of thesecond pixel PX2 has a symmetric structure in the transverse direction.

In another alternative embodiment, as shown in FIG. 10D, the pixelcircuit group PCG according to the embodiment may include pixel circuitsof 4×4 pixels PX (e.g., sixteen (16) pixel or thirty two (32)sub-pixels). The sixteen pixels PX may include eight first pixels PX1and eight second pixels PX2 that are alternately arranged with eachother. Each of a pair of pixel circuits PC1 and PC3 of the first pixelPX1 and a pair of pixel circuits PC2 and PC3 of the second pixel PX2 hasa symmetric structure in the transverse direction. The pixel circuitsPC1 and PC3 of the first pixel PX1 and the pixel circuits PC2 and PC3 ofthe second pixel PX2 that are arranged above and below each other aresymmetric with each other in the longitudinal direction.

FIG. 11 is a diagram showing wirings of a pixel circuit group PCGaccording to an embodiment of the disclosure.

Referring to FIG. 11, in an embodiment, a plurality of pixel wirings PW(e.g., PW1 to PW4) are distributed in the pixel circuit group PCG, and aplurality of sensing wirings SW (SW1 to SW4) of the sensing circuit SCmay be arranged around the pixel circuit group PCG. In an embodimenthaving the arrangement of the pixel circuits PC of the pixel circuitgroup PCG and the arrangement of the pixel wirings PW and the sensingwirings SW as shown in FIG. 11, parasitic capacitor may exist betweenthe pixels. Accordingly, in such an embodiment, a shielding wiring CSW,e.g., first shielding wiring CSW1 and a second shielding wiring CSW2,may be selectively provided at an appropriate location to reduce orshield the parasitic capacitor.

In an embodiment, the shielding wiring CSW may be a floating wiring or awiring to which a predetermined voltage is applied. Here, thepredetermined voltage may be one of voltages applied to the pixelcircuit PC or voltages applied to the sensing circuit SC. The shieldingwiring CSW may be provided in a same layer as at least one of the pixelwirings PW of the pixel circuit PC and the sensing wirings SW of thesensing circuit SC, and may include a same material as the at least oneof the pixel wirings PW of the pixel circuit PC and the sensing wiringsSW of the sensing circuit SC.

In such an embodiment, as shown in FIG. 11, first to fourth pixelwirings PW1 to PW4 are arranged at upper, lower, left, and right sidesof the pixel circuit group PCG, respectively, and first to fourthsensing wirings SW1 to SW4 of the sensing circuit SC are arranged aroundthe pixel circuit group PCG. In such an embodiment, the first shieldingwiring CSW1 and the second shielding wiring CSW2 are arranged to cross acenter of the pixel circuit group PCG in a transverse direction and alongitudinal direction, respectively.

In such an embodiment, the numbers and arrangement of the pixel wiringsPW, the sensing wirings SW, and the shielding wirings CSW may bevariously modified depending on configurations of the pixel circuit PCand the sensing circuit SC to reduce the parasitic capacitor among thepixels.

FIG. 12 is a circuit diagram of a pixel circuit PCa in a sub-pixelaccording to an embodiment of the disclosure.

Referring to FIG. 12, an embodiment of the pixel circuit PCa includesfirst to fourth thin film transistors T1 to T4, and a capacitor Cst. Thepixel circuit PCa is connected to the light-emitting device. Thelight-emitting device may be an organic light-emitting diode OLED.

In such an embodiment, a gate electrode of the first thin filmtransistor T1 is connected to a first electrode of the capacitor Cst. Afirst electrode of the first thin film transistor T1 is connected to adriving voltage line PL that applies a first power voltage ELVDD theretovia the fourth thin film transistor T4. A second electrode of the firstthin film transistor T1 is electrically connected to a first electrodeof the organic light-emitting diode OLED. The first thin film transistorT1 receives a data signal DATA according to a switching operation of thesecond thin film transistor T2, and supplies a driving current to theorganic light-emitting diode OLED.

In such an embodiment, a gate electrode of the second thin filmtransistor T2 is connected to a scan line SL that applies a scan signalSn. A first electrode of the second thin film transistor T2 is connectedto a data line DL that applies a data signal DATA thereto. A secondelectrode of the second thin film transistor T2 is connected to thefirst electrode of the first thin film transistor T1, and thus, isconnected to the driving voltage line PL via the fourth thin filmtransistor T4. The second thin film transistor T2 is turned on inresponse to the scan signal Sn transmitted through the scan line SL, andthen, performs a switching operation for transferring the data signalDATA transmitted through the data line DL to the first electrode of thefirst thin film transistor T1.

In such an embodiment, a gate electrode of the third thin filmtransistor T3 is connected to the scan line SL. A first electrode of thethird thin film transistor T3 is connected to the second electrode ofthe first thin film transistor T1, to be connected to the firstelectrode of the organic light-emitting diode OLED. The second electrodeof the third thin film transistor T3 is connected to a first electrodeof the capacitor Cst and the gate electrode of the first thin filmtransistor T1. The third thin film transistor T3 is turned on inresponse to the scan signal Sn transmitted through the scan line SL, andconnects the gate electrode and the second electrode of the first thinfilm transistor T1 to diode-connect the first thin film transistor T1.

The gate electrode of the fourth thin film transistor T4 is connected toan emission control line EML that applies an emission control signal EM.A first electrode of the fourth thin film transistor T4 is connected tothe driving voltage line PL. A second electrode of the fourth thin filmtransistor T4 is connected to the first electrode of the first thin filmtransistor T1 and the second electrode of the second thin filmtransistor T2.

The second electrode of the capacitor Cst is connected to the drivingvoltage line PL. The first electrode of the capacitor Cst is connectedto the gate electrode of the first thin film transistor T1 and thesecond electrode of the third thin film transistor T3.

The first electrode of the organic light-emitting diode OLED isconnected to the second electrode of the first thin film transistor T1,and the second electrode of the organic light-emitting diode OLED isconnected to a power source supplying a second power voltage ELVSS. Theorganic light-emitting diode OLED receives the driving current from thefirst thin film transistor T1 to emit light, and thus displays images.

FIG. 13 is a circuit diagram of a sensing circuit SCa in a sensing pixelaccording to an embodiment of the disclosure.

Referring to FIG. 13, an embodiment of the sensing circuit SCa mayinclude a first to third sensing thin film transistors ST1 to ST3, and areference capacitor CR. A sensing electrode that forms a sensingcapacitor CF may be connected to the reference capacitor CR.

In such an embodiment, a gate electrode of the first sensing thin filmtransistor ST1 is connected to a node N. A first electrode of the firstsensing thin film transistor ST1 is connected to a readout line RL to areadout signal Rx is applied, and a second electrode of the firstsensing thin film transistor ST1 is connected to a second electrode ofthe third sensing thin film transistor ST3.

A gate electrode of the second sensing thin film transistor ST2 isconnected to a first sensing scan line SSL1 that applies a first sensingscan signal SSn-1. A first electrode of the second sensing thin filmtransistor ST2 is connected to a common voltage line VCL that applies acommon voltage Vcom, and a second electrode of the second sensing thinfilm transistor ST2 is connected to the node N.

A gate electrode of the third sensing thin film transistor ST3 isconnected to a second sensing scan line SSL2 that applies a secondsensing scan signal SSn. A first electrode of the third sensing thinfilm transistor ST3 is connected to the common voltage line VCL thatapplies the common voltage Vcom, and the second electrode of the thirdsensing thin film transistor ST3 is connected to the second electrode ofthe first sensing thin film transistor ST1.

A first electrode of the reference capacitor CR is connected to thesecond sensing scan line SSL2 and a gate electrode of the third sensingthin film transistor ST3. A second electrode of the reference capacitorCR is connected to the node N to be connected to the gate electrode ofthe first sensing thin film transistor ST1.

The sensing capacitor CF is a variable capacitor formed by the sensingelectrode and a surface of a finger. The sensing electrode of thesensing capacitor CF is connected to the node N to be connected to thegate electrode of the first sensing thin film transistor ST1, the secondelectrode of the second sensing thin film transistor ST2, and the secondelectrode of the reference capacitor CR.

In an embodiment, the second sensing thin film transistor ST2 is turnedon in response to the first sensing scan signal SSn-1, and may reset thegate electrode of the first thin film transistor ST1 connected to thenode N by using the common voltage Vcom applied thereto. In such anembodiment, the third sensing thin film transistor ST3 is turned on inresponse to the second sensing scan signal SSn and then, the commonvoltage Vcom is applied to the first electrode of the referencecapacitor CR. Here, due to the coupling of a capacitance of the sensingcapacitor CF and a capacitance of the reference capacitor CR in theridges and valleys of a fingerprint, a voltage at the node N, that is, avoltage of the gate electrode of the first sensing thin film transistorST1 changes. Accordingly, the fingerprint may be recognized via thevariation in an amount of a current flowing in the first sensing thinfilm transistor ST1.

FIG. 14 is a plan view of an organic light-emitting display apparatus,showing arrangement of the pixel circuit PCa of FIG. 12 and the sensingcircuit SCa of FIG. 13, according to an embodiment of the disclosure.

Referring to FIG. 14, in an embodiment, the sensing circuit SCa isarranged to surround the pixel circuit group PCG in which the pixelcircuits PCa of 2×2 pixels are arranged symmetrically with each other inlongitudinal and transverse directions.

The scan line SL and the emission control line EML of the pixel circuitPCa and the first sensing scan line SSL1 and the second sensing scanline SSL2 of the sensing circuit SCa are spaced apart from one another,and extend in a row direction. The driving voltage line PL and the dataline DL of the pixel circuit PCa and the common voltage line VCL and thereadout line RL of the sensing circuit SCa are spaced apart from oneanother and extend in a column direction.

In an embodiment, the first electrode and the second electrode of eachthin film transistor in the pixel circuit PCa and the sensing circuitSCa shown in FIGS. 12 and 13 respectively correspond to a source regionand a drain region doped with impurities in the active layers 121 and131.

The first to fourth thin film transistor T1 to T4 of the pixel circuitPCa are arranged along the active layer 121. The active layer 121includes polysilicon, and the active layer 121 includes a channel regionthat is not doped with impurities, and the source region and the drainregion doped with impurities at opposite sides of the channel region.Here, the impurities may vary depending on a kind of the thin filmtransistor, and may be N-type impurities or P-type impurities.

The first thin film transistor T1 includes the active layer 121 that iscurved as S-like shape. The first thin film transistor T1 and thecapacitor Cst overlap each other in a vertical direction.

The first electrode of the capacitor Cst also functions as the gateelectrode of the first thin film transistor T1. The first electrode ofthe capacitor Cst is separated from an adjacent sub-pixel and has asquare shape. The second electrode of the capacitor Cst extends to beconnected to an adjacent pixel. An opening GH is defined through thesecond electrode of the capacitor Cst so that the connecting electrodeconnects the gate electrode of the first thin film transistor T1 to thesecond electrode of the third thin film transistor T3 via the openingGH.

The driving voltage line PL crosses a center between a pair of pixelcircuits PCa in the column direction, and is connected to the secondelectrode of the capacitor Cst extending in the row direction to have amesh structure. The data lines DL of the pair of pixel circuits PCa arearranged to face each other as the driving voltage line PL is interposedtherebetween.

The second sensing thin film transistor ST2 of the sensing circuit SCaare arranged at an upper left portion of the pixel circuit PCa of 2×2pixels, and the first sensing thin film transistor ST1 and the thirdsensing thin film transistor ST3 are arranged at a lower portion of thepixel circuit PCa of 2×2 pixels, when viewed from a plan view in athickness direction of the substrate 10.

The common voltage line VCL is arranged at a left portion of the pixelcircuits PCa of 2×2 pixels in the column direction, when viewed from theplan view. The common voltage line VCL is arranged on an outer portionof the data line DL, when viewed from the plan view. The readout line RLis arranged in the column direction across centers of the pixel circuitsPCa of 2×2 pixels. The readout line RL is arranged between opposite datalines DL. The first sensing scan line SSL1 and the second sensing scanlien SSL2 are arranged on an outer portion of the emission control lineEML, when viewed from the plan view.

The first electrode and the second electrode of the reference capacitorCR are arranged to overlap each other in the row direction at a lowerportion of the first sensing thin film transistor ST1 and the thirdsensing thin film transistor ST3, when viewed from the plan view.

In such an embodiment, a first via hole VIA1 for connecting the secondelectrode of the first thin film transistor T1 to the first electrode ofthe light-emitting device is defined through each pixel circuit PC. Insuch an embodiment, a second via hole VIA2 for connecting the sensingelectrode of the sensing capacitor CF to the second electrode of thereference capacitor CR is defined through the sensing circuit SCa.

FIGS. 15 to 17 are partial cross-sectional views showing embodiments ofthe organic light-emitting display apparatus of FIG. 14.

FIG. 15 is a cross-sectional view showing the first thin film transistorT1 and the capacitor Cst of the pixel circuit PCa and the first sensingthin film transistor ST1 and the reference capacitor CR of the sensingcircuit SCa in an embodiment of the organic light-emitting displayapparatus. Hereinafter, embodiments of the organic light-emittingdisplay apparatus will be described with reference to FIGS. 15 to 17 andalso with reference to FIG. 14.

In an embodiment, as shown in FIG. 15, the buffer layer 11 is arrangedon the substrate 10.

Active layers 121 of the first to fourth thin film transistor T1 to T4and active layers 131 of the first to third sensing thin film transistorST1 to ST3 are disposed on the buffer layer 11. FIG. 15 shows the activelayer 121 of the first thin film transistor T1 and the active layer 131of the first sensing thin film transistor ST1.

The active layers 121 of the first to fourth thin film transistor T1 toT4 are connected to one another. The active layers 131 of the first andthird sensing thin film transistors ST1 and ST3 are connected to oneanother, and the active layer 131 of the second sensing thin filmtransistor ST2 is isolated.

The first insulating layer 12 is disposed on the active layers 121 and131.

The gate electrodes of the first to fourth thin film transistors T1 toT4, the gate electrodes of the first to third sensing thin filmtransistors ST1 to ST3, and a first electrode 141 of the referencecapacitor CR are disposed on the first insulating layer 12. FIG. 15shows the gate electrode 123 of the first thin film transistor T1, thegate electrode 133 of the first sensing thin film transistor ST1, andthe first electrode 141 of the reference capacitor CR. The gateelectrode 123 of the first thin film transistor T1 also functions as thefirst electrode of the capacitor Cst.

The emission control line EML, the scan line SL, and the first andsecond sensing scan lines SSL1 and SSL2 may be arranged at the samelayer as those of the gate electrodes 123 and 133.

The second insulating layer includes a first second insulating layer 13a, a second second insulating layer 13 b and a third second insulatinglayer 13 c. The first second insulating layer 13 a is disposed on thegate electrodes 123 and 133 and the first electrode 141. The secondelectrode 125 of the capacitor Cst and the second electrode 143 of thereference capacitor CR are disposed on the first second insulating layer13 a. The second second insulating layer 13 b is disposed on the secondelectrodes 125 and 143. A connecting electrode 151 for connecting thegate electrode 133 of the first sensing thin film transistor ST1 to thesecond electrode 143 of the reference capacitor CR is disposed on thesecond second insulating layer 13 b.

The connecting electrode 151 contacts the gate electrode 133 and thesecond electrode 143 via a hole formed by patterning the first secondinsulating layer 13 a and the second second insulating layer 13 b topartially expose the gate electrode 133 and a hole formed by patterningthe second second insulating layer 13 b to partially expose the secondelectrode 143.

In an embodiment, although not shown in FIG. 15, a connecting electrodefor connecting the second electrode of the second sensing thin filmtransistor ST2 to the second electrode 143 of the reference capacitor CRmay be further provided as shown in FIG. 14.

The third second insulating layer 13 c is disposed on the connectingelectrode 151. The driving voltage line PL, the data line DL, the commonvoltage line VCL, and the readout line RL are disposed on the thirdsecond insulating layer 13 c. In an embodiment, a connecting electrode153 for connecting the active layer 121 of the first thin filmtransistor T1 to the first electrode of the light-emitting device and aconnecting electrode 155 for connecting the second electrode 143 of thereference capacitor CR to the sensing electrode of the sensing capacitorCF are disposed on the third second insulating layer 13 c.

The connecting electrode 153 contacts the active layer 121 via a holeformed by patterning the first second insulating layer 13 a, the secondsecond insulating layer 13 b, and the third second insulating layer 13 cto partially expose the active layer 121. The connecting electrode 155contacts the second electrode 143 via a hole formed by patterning thesecond second insulating layer 13 b and the third second insulatinglayer 13 c to partially expose the second electrode 143.

In an embodiment, although not shown in FIG. 15, referring to FIG. 14, aconnecting electrode for connecting the gate electrode of the first thinfilm transistor T1 to the second electrode of the third thin filmtransistor T3 may be further provided. In an embodiment, the drivingvoltage line PL contacts the second electrode 125 via a hole formed bypatterning the second second insulating layer 13 b and the third secondinsulating layer 13 c to partially expose the second electrode 125. Thedata line DL contacts the active layer 121 of the second thin filmtransistor T2 via a hole formed by patterning the first insulating layer12, the first second insulating layer 13 a, the second second insulatinglayer 13 b and the third second insulating layer 13 c to partiallyexpose the active layer 121 of the second thin film transistor T2. Thecommon voltage line VCL contacts the active layers 131 of the secondsensing thin film transistor ST2 and the third sensing thin filmtransistor ST3 via a hole formed by patterning the first insulatinglayer 12, the first second insulating layer 13 a, the second secondinsulating layer 13 b and the third second insulating layer 13 c topartially expose the active layers 131 of the second sensing thin filmtransistor ST2 and the third sensing thin film transistor ST3. Thereadout line RL contacts the active layer 131 of the first sensing thinfilm transistor ST1 via a hole formed by patterning the first insulatinglayer 12, the first second insulating layer 13 a, the second secondinsulating layer 13 b and the third second insulating layer 13 c topartially expose the active layer 131 of the first sensing thin filmtransistor ST1.

The third insulating layer 14 is disposed on the driving voltage linePL, the data line DL, the common voltage line VCL and the readout lineRL. In such an embodiment, the first via hole VIA1 partially exposingthe connecting electrode 153 and a second via hole VIA2 partiallyexposing the connecting electrode 155 is defined through the thirdinsulating layer 14.

In an embodiment, as shown in FIG. 16, a first electrode 31 of thelight-emitting device contacting the connecting electrode 153 via thefirst via hole VIA1 and a sensing electrode 51 of the sensing capacitorCF contacting the connecting electrode 155 via the second via hole VIA2may be disposed on the third insulating layer 14.

The pixel-defining layer 15 is disposed on the first electrode 31 of thelight-emitting device EL and the sensing electrode 51 of the sensingcapacitor CF. In an embodiment, an opening that partially exposes thefirst electrode 31 of the light-emitting device EL and covers thesensing electrode 51 of the sensing capacitor CF is defined through thepixel-defining layer 15.

The intermediate layer 33 and the second electrode 35 are sequentiallydisposed on the first electrode 31 of the light-emitting device EL. Thesecond electrode 35 may be patterned on the pattern area A correspondingto the sensing electrode 51 of the sensing capacitor CF to define anopening.

In an alternative embodiment, as shown in FIG. 17, the first electrode31 of the light-emitting device EL contacting the connecting electrode153 via the first via hole VIA1 and the connecting electrode 53contacting the connecting electrode 155 via the second via hole VIA2 arefurther disposed on the third insulating layer 14.

In such an embodiment, the intermediate layer 33 and the secondelectrode 35 are sequentially disposed on the first electrode 31 of thelight-emitting device EL. The second electrode 35 is patterned in thepattern area B corresponding to the connecting electrode 53 to define anopening.

In such an embodiment, the fifth insulating layer 18 is disposed on thesecond electrode 35 of the light-emitting device EL. The fifthinsulating layer 18 and the pixel-defining layer 15 are patterned in anarea C corresponding to the connecting electrode 53 to define an openingthat partially exposes the connecting electrode 53.

In such an embodiment, the sensing electrode 55 of the sensing capacitorCF is disposed on the fifth insulating layer 18. The sensing electrode55 of the sensing capacitor CF contacts the connecting electrode 53 inthe area C. The sensing electrode 55 may have a large area overlappingwith an upper portion of the second electrode 35 of the light-emittingdevice EL.

FIG. 18 is a plan view of an organic light-emitting display apparatus,showing arrangement of the pixel circuit PCa of FIG. 12 and the sensingcircuit SCa of FIG. 13, according to another embodiment of thedisclosure.

Referring to FIG. 18, the sensing circuit SCa is arranged to surroundthe pixel circuit group PCG in which the pixel circuits PCa, e.g., PCa1,PCa2 or PCa3, of 2×2 pixels are arranged symmetric with one another inlongitudinal and transverse directions.

Wirings shown in FIG. 18 will now be described. The scan line SL and theemission control line EML of the pixel circuit PCa and the first sensingscan line SSL1 and the second sensing scan line SSL2 of the sensingcircuit SCa extend in a row direction being spaced apart from oneanother. The driving voltage line PL and the data line DL of the pixelcircuit PCa and the common voltage line VCL and the readout line RL ofthe sensing circuit SCa extend in a column direction being spaced apartfrom one another.

The driving voltage line PL extends to cross the center between a pairof pixel circuits PCa in the column direction. The data lines DL of thepair of pixel circuits PCa are arranged to face each other as thedriving voltage line PL is interposed therebetween.

The common voltage line VCL is arranged at a left portion of the pixelcircuits PCa of 4×4 pixels in the column direction when viewed from aplan view. The common voltage line VCL is arranged on an outer portionof the data line DL when viewed from the plan view. The readout line RLis arranged in the column direction to cross centers of the pixelcircuits PCa of 4×4 pixels. The readout line RL is arranged betweenopposite data lines DL.

The first sensing scan line SSL1 and the second sensing scan lien SSL2are arranged on an outer portion of the emission control line EML whenviewed from the plan view.

A first shield line CL1 is arranged between the first sensing scan lineSSL1 and the second sensing scan line SSL2, and a second shield line CL2is arranged between the common voltage line VCL and the readout line RLto prevent the parasitic capacitance from being generated among aplurality of pixels. The first shield line CL1 is arranged in the rowdirection to cross the center between the pixel circuits PCa of 4×4pixels. The second shield line CL2 is arranged in the column directionbetween the data lines DL of a pair of pixels.

The first shield line CL1 may be disposed in a same layer as the scanline SL and include a same material as the scan line SL.

The second shield line CL2 may be disposed in the same layer as the dataline DL and include a same material as the data line DL.

In an embodiment, the first shield line CL1 and the second shield lineCL2 may be floating wirings, for example. In an alternative embodiment,the first shield line CL1 and the second shield line CL2 areelectrically connected to the common voltage line VCL to receive thecommon voltage Vcom.

Embodiments of the invention are not limited to that shown in FIG. 18,and the number and arranging locations of the shield lines CL may bevariously modified depending on the number of pixels included in thepixel circuit group, the configuration of the pixel circuit PC, and theconfiguration of the sensing circuit SC.

In embodiments, the transistors may be P-type thin film transistor, butembodiments are not limited thereto. Alternatively, such transistors maybe an N-type thin film transistor.

According to embodiments set forth herein, the sensor may be formedsimultaneously with the pixels, and thus, a display apparatus having asensor built therein may be implemented without using an additionalmask, increasing costs, and changing processes.

In such embodiments, one sensor circuit is provided in each of theplurality of pixels, and the circuits of the plurality of pixels aresymmetrically arranged to reduce the variation in the parasiticcapacitor among the pixels.

According to embodiments of the disclosure, the display apparatus inwhich pixels and the fingerprint sensors are integrally provided on thesubstrate a may use the entire panel as a sensor and may have a thinthickness. Lock mode may be set for each application and security inpayment, sending money, etc. may be strengthened by using thefingerprint sensor.

According to embodiments of the disclosure, the display apparatusincludes a fingerprint recognition sensor integrally provided therein,and thus, a mura defect caused by a variation in the parasitic capacitoramong the pixels may be effectively prevented.

It should be understood that embodiments described herein should beconsidered in a descriptive sense only and not for purposes oflimitation. Descriptions of features or aspects within each embodimentshould typically be considered as available for other similar featuresor aspects in other embodiments.

While the present invention has been particularly shown and describedwith reference to exemplary embodiments thereof, it will be understoodby those of ordinary skill in the art that various changes in form anddetails may be made therein without departing from the spirit or scopeof the present invention as defined by the following claim.

What is claimed is:
 1. A display apparatus comprising: a first pixelcircuit connected to a first data line; a second pixel circuit adjacentto the first pixel circuit and connected to a second data line; asensing circuit arranged around the first pixel circuit and the secondpixel circuit; and a readout line connected to the sensing circuit anddisposed between the first pixel circuit and the second pixel circuit.2. The display apparatus of claim 1, wherein the readout line is in asame layer as the first data line and the second data line.
 3. Thedisplay apparatus of claim 1, wherein the first pixel circuit and thesecond pixel circuit are symmetrically with respect to the readout line.4. The display apparatus of claim 1, wherein the readout line is betweenthe first data line and the second data line in a plan view.
 5. Thedisplay apparatus of claim 1, further comprising a light-emitting deviceconnected to the first pixel circuit, wherein the light-emitting devicecomprises: a first electrode connected to the first pixel circuit; asecond electrode opposite to the first electrode; and an emission layerbetween the first electrode and the second electrode.
 6. The displayapparatus of claim 5, further comprising a sensing electrode connectedto the sensing circuit.
 7. The display apparatus of claim 6, wherein thesensing electrode and the first electrode of the light-emitting deviceare disposed in a same layer.
 8. The display apparatus of claim 7,wherein an opening is defined through the second electrode of thelight-emitting device, and the opening overlaps the sensing electrode.9. The display apparatus of claim 6, wherein the sensing electrode isdisposed on the second electrode of the light-emitting device andoverlaps the light-emitting device.
 10. The display apparatus of claim9, wherein an opening is defined through the second electrode of thelight-emitting device, and wherein the sensing electrode is connected tothe sensing circuit via the opening.
 11. The display apparatus of claim6, further comprising: an electrode layer connecting the first pixelcircuit and the sensing electrode.
 12. The display apparatus of claim11, wherein the electrode layer is in a same layer as the first dataline and the second data line.
 13. The display apparatus of claim 1,further comprising: a shield line between the first pixel circuit andthe second pixel circuit.
 14. The display apparatus of claim 13, whereinthe shield line is a floating line.
 15. The display apparatus of claim13, wherein a predetermined voltage is applied to the shield line. 16.The display apparatus of claim 13, wherein the shield line is parallelto the first data line and the second data line.
 17. The displayapparatus of claim 13, wherein the shield line is parallel to a scanline connected to the first pixel circuit.
 18. The display apparatus ofclaim 6, further comprising: an encapsulation layer on thelight-emitting device.
 19. The display apparatus of claim 18, whereinthe sensing electrode is between the first pixel circuit and theencapsulation layer.
 20. The display apparatus of claim 18, wherein thesensing electrode is between the light-emitting device and theencapsulation layer.